FCD360N65S3R0
RoHS

FCD360N65S3R0

FCD360N65S3R0

onsemi

MOSFET N-CH 650V 10A DPAK

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FCD360N65S3R0

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Products Specifications
Vgs(th) (Max) @ Id4.5V @ 1mA
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageD-PAK (TO-252)
SeriesSuperFET® III
Rds On (Max) @ Id, Vgs360 mOhm @ 5A, 10V
Power Dissipation (Max)83W (Tc)
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Other NamesFCD360N65S3R0-ND FCD360N65S3R0OSTR
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free StatusLead free
Input Capacitance (Ciss) (Max) @ Vds730pF @ 400V
Gate Charge (Qg) (Max) @ Vgs18nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)650V
Detailed DescriptionN-Channel 650V 10A (Tc) 83W (Tc) Surface Mount D-PAK (TO-252)
Current - Continuous Drain (Id) @ 25°C10A (Tc)