

SI3900DV-T1-E3
Part NoSI3900DV-T1-E3
ManufacturerVishay Siliconix
DescriptionMOSFET 2N-CH 20V 2A 6TSOP
Datasheet
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Availability:
15409
pieces
Products Specifications
Package | Tape & Reel (TR),Cut Tape (CT),Digi-Reel® |
---|---|
Series | TrenchFET® |
ProductStatus | Active |
Technology | MOSFET (Metal Oxide) |
Configuration | 2 N-Channel (Dual) |
FETFeature | Logic Level Gate |
DraintoSourceVoltage(Vdss) | 20V |
Current-ContinuousDrain(Id)@25°C | 2A |
RdsOn(Max)@Id | 125mOhm @ 2.4A, 4.5V |
Vgs | 1.5V @ 250µA |
Vgs(th)(Max)@Id | 4nC @ 4.5V |
GateCharge(Qg)(Max)@Vgs | - |
InputCapacitance(Ciss)(Max)@Vds | 830mW |
Power-Max | -55°C ~ 150°C (TJ) |
OperatingTemperature | Surface Mount |
MountingType | SOT-23-6 Thin, TSOT-23-6 |
Package/Case | 6-TSOP |
SupplierDevicePackage | - |
Grade | - |
Qualification |